| PART |
Description |
Maker |
| LSIC2SD120A10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| SML100M12MSF SML010FBDH06 SML10SIC06YC SML05SC06D3 |
Silicon Carbide Power
|
Seme LAB
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| GA50JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| C2M0160120D-15 |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| GC2X100MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GA20SICP12-263-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| C3D10060A |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
